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Both voltages are 1.

Voltage-divider Circuit Design a. For most applications the silicon diode is the device of choice due to its higher temperature capability. Parallel Clippers continued b. Thus it can be seen that the given formulation was actually a minimum value of the output impedance.

The boylesstad level of the U1A: The magnitude of the Beta of a transistor is a property of the device, not of the circuit. For an increase in temperature, the forward diode current will increase while the voltage VD across the diode will decline. In the case of the 2N transistor, which had a higher Dde than the 2N transistor, the Q point of the former shifted higher up the loadline toward saturation. Clampers Effect of R a. Note that no biasing resistors are needed for stage 2.


For reverse-bias potentials in excess of 10 V the capacitance levels off at about 1. Vin is swept linearly from 2 V to boyelstad V in 1 V increments.

Input terminal 1 Input terminal 2 Output terminal 3 1 1 0 0 1 1 1 0 1 0 0 1 b. There are three clock pulses to the left of the cursor.

analisis de circuitos electricos y electronicos | progras gratis

Replace R1 with 20 Kohm resistor. It depends upon the waveform. Thus, the smaller the ratio, the more Beta independent is the circuit. Example of a calculation: CLK terminal is 5 volts. For more complex waveforms, the nod goes to the oscilloscope. The effect was a reduction in the dc level of the output voltage. As I B increases, so does I C. This is probably the largest deviation to be tolerated.

The most important difference between the characteristics of a diode and a simple switch is that the switch, being mechanical, is capable of conducting current in either direction while the diode only allows charge to flow through the element in one direction specifically the direction defined by the arrow of the symbol using conventional current flow.

Analisis de Circuitos en Ingenieria

V 1, 2 remains at 2 V during the cycle of V 1 6. Half-Wave Rectification continued b. This is equal to the period of the wave. For the negative region of vi: The output impedances again are in reasonable agreement, differing by no more than 9 percent from each other. B are the inputs to the gate. It eescargar to be noted however that with such small values the difference in just one ohm manifests itself as a large percent change.


Q relative to the input pulse U1A: The amplitude of the TTL pulses are about 5 volts, that of the Output terminal 3 is about 3. Multiple Current Mirrors a.

Low-Frequency Response Calculations a. The frequency of 10 Hz of the TTL circuutos is identical to that of the simulation pulse. The right Si diode is reverse-biased. PSpice Simulation Part A 4. Zener Diode Regulation a. CB Input Impedance, Zi a.

No significant discrepancies 8.

For a 2N transistor, the geometric average of Beta is closer to