BUT11AF DATASHEET PDF

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BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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Extension for repetitive pulse operation. Application information Where application information is given, it is advisory and does not form part of the specification. August 4 Ptot max and Ptot peak max lines.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Normalised power derating and second breakdown curves. Typical base-emitter and collector-emitter saturation voltages. Product specification This data sheet contains final product specifications. August 2 Rev 1.

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Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

August 7 Rev 1. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Refer to mounting instructions for F-pack envelopes. Switching times waveforms with inductive load. Test circuit for VCEOsust. Oscilloscope display for VCEOsust. Typical DC current gain.

Test circuit inductive load. No liability will be accepted by the publisher for any consequence of its use.

BUT11AF Datasheet

Switching times waveforms with resistive load. Reverse bias safe operating area. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Forward bias safe operating area. UNIT – – 1. Philips customers using or selling these products datxsheet use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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BUT11AF Datasheet PDF –

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. SOT; The seating plane is electrically isolated from all terminals.

Region of permissible DC operation. August 8 Rev 1.

NPN Silicon Transistor

Typical base-emitter saturation voltage. Test circuit resistive load. Stress above one or more of the limiting values may cause permanent damage to the device.