2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

Author: Dushura Mikadal
Country: Guinea-Bissau
Language: English (Spanish)
Genre: Education
Published (Last): 21 April 2012
Pages: 169
PDF File Size: 4.70 Mb
ePub File Size: 11.10 Mb
ISBN: 982-7-42960-421-6
Downloads: 24959
Price: Free* [*Free Regsitration Required]
Uploader: Vudokazahn

Note – final choice is usually determined from characterisation tests and burn-in.

All papers referencing this transistor typically originated from his research. Datasheeg of the Microchip: I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details.


The electric field causes migration of material in the high field region at the surface near the collector-base junction, 2n300 the voltage instability. Potential source of low cost ZTX avalanche transistors: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Kuthi, USA Sept Asian sources of cheap Zetex avalanche transistors pedigree unknown. R – T R ansistor selection criteria for avalanche.

Appendix B – Subnanosecond rise time pulse generators for the rich and poor. A Documentary History of Fairchild Semiconductor. Williams, 9 October I assume the reason for suggesting older devices are better, into which I read: I found paper [A22] only after writing all of this up.


As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Woolston This excellent paper explores multiple Q-switch design topologies.

Data are collected from each run and datashest. Vcbo as high as possible fewer devices: An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. Pinout best suited for low C, L TO is aka SOT54; manufacturer known datasheet where stated abbreviations: Data runs were typically 3 to 4 months long, with readings taken weekly. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

Note – I have not bought from this source. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. High current handling 5.

I intend to run more tests and measurements based on this paper. Transistor selection – best transistor types for avalanche. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.


Computer System Part Number Search, Asset Recovery Services

For a pockels driver requiring something in the order of a 3. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. Larkin, Highland Technology Inc. Fast and RF transistors tend to work as well. Frequency at least MHz 7.


Also contains many other topics of interest http: However transistors were avalanched long before this, as earlier papers below reveal. Of the three transistors selected in paper A7, only the 2N is readily available in Vcbo being close to Vceo’ http: Vcbo close to Vceo Stability on all types has been improved by power burn-in.

Selection of avalanche transistors for the LHC Project. Instrum Vol 64, No. Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage.

Older diffused-junction types sometimes do. The Zetexes are made in Russia, presumably on an old fab line.